Monolithic high‑precision current sensor with 200 µΩ insertion resistance, 2 MHz bandwidth, integrated over‑current detection (OCD) and common‑mode magnetic‑field rejection
SCS8100
The SCS8100 is an integrated‑current‑path Hall‑effect current sensor featuring industry‑leading insertion resistance, accuracy, response speed and long‑term lifetime stability. The device senses the magnetic field generated by primary current flowing through the integrated conductive path, and produces an analog output voltage signal proportional to the magnitude of the measured current.
Adopting a differential Hall architecture to suppress external common‑mode magnetic interference, the SCS8100 provides precision reference voltage REF output together with OUT output to form a differential signal, further enhancing anti‑interference capability under complex electromagnetic environments.
On‑chip precision temperature‑compensation and mechanical‑stress‑compensation circuits deliver a maximum sensitivity error of less than 2% over full temperature and lifetime ranges, making it suitable for the vast majority of current‑sensing scenarios.
The SCS8100 is an integrated‑current‑path Hall‑effect current sensor featuring industry‑leading insertion resistance, accuracy, response speed and long‑term lifetime stability. The device senses the magnetic field generated by primary current flowing through the integrated conductive path, and produces an analog output voltage signal proportional to the magnitude of the measured current.
Adopting a differential Hall architecture to suppress external common‑mode magnetic interference, the SCS8100 provides precision reference voltage REF output together with OUT output to form a differential signal, further enhancing anti‑interference capability under complex electromagnetic environments.
On‑chip precision temperature‑compensation and mechanical‑stress‑compensation circuits deliver a maximum sensitivity error of less than 2% over full temperature and lifetime ranges, making it suitable for the vast majority of current‑sensing scenarios.
